| Capacitance-frequency Spectrum Characterization of Organics/Metal Schottky Diodes | |
Guo Wenge1 ; Zhang Yancao2; Zhang Sougang1
| |
| 2006 | |
| 发表期刊 | Semiconductor Photonics and Technology
 |
| ISSN | 1007-0206 |
| 卷号 | 12期号:4页码:250 |
| 摘要 | An organics/metal Schottky diode is fabricated using 3, 4∶9, 10-perylenetetracarboxylic-dianhydride(PTCDA) thin film sandwiched between ITO and Au by simple thermal evaporation technique. The current-voltage(I-V) characteristics are investigated at room temperature in open air. The results show the rectification ratio is in excess of 100. From the capacitance-frequency(C-f) and capacitance-voltage(C-V) measurements, the Schottky barrier height between 0.2～0.3 eV is obtained according to standard Schottky theory. |
| 语种 | 英语 |
| 文献类型 | 期刊论文 |
| 条目标识符 | http://210.72.145.45/handle/361003/9109 |
| 专题 | 量子频标研究室 |
| 作者单位 | 1.中国科学院国家授时中心 2.Institute for Optical Information Science and Technology, Department of Physics, Northwest Polytechnical University |
| 第一作者单位 | 中国科学院国家授时中心 |
| 推荐引用方式 GB/T 7714 | Guo Wenge,Zhang Yancao,Zhang Sougang. Capacitance-frequency Spectrum Characterization of Organics/Metal Schottky Diodes[J]. Semiconductor Photonics and Technology,2006,12(4):250. |
| APA | Guo Wenge,Zhang Yancao,&Zhang Sougang.(2006).Capacitance-frequency Spectrum Characterization of Organics/Metal Schottky Diodes.Semiconductor Photonics and Technology,12(4),250. |
| MLA | Guo Wenge,et al."Capacitance-frequency Spectrum Characterization of Organics/Metal Schottky Diodes".Semiconductor Photonics and Technology 12.4(2006):250. |
| 条目包含的文件 | ||||||
| 文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
| Capacitance_freq_省略_（619KB） | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | 请求全文 | |
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